製造零件編號

Texas Instruments NexFET Type N-Channel MOSFET, 110 A, 100 V Enhancement, 8-Pin VSON CSD19531Q5AT

RS庫存編號:: 823-9259
製造零件編號:: CSD19531Q5AT
製造商:: Texas Instruments

Texas Instruments NexFET Type N-Channel MOSFET, 110 A, 100 V Enhancement, 8-Pin VSON CSD19531Q5AT

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小計（1 包，共 5 件）*

TWD387.00

(不含稅)

TWD406.35

訂單超過 $1,300.00 免費送貨

有庫存

1,140 件準備從其他地點送貨

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單位	每單位	每包*
5 - 60	TWD77.40	TWD387.00
65 - 120	TWD75.40	TWD377.00
125 +	TWD74.40	TWD372.00

* 參考價格

RS庫存編號:: 823-9259
製造零件編號:: CSD19531Q5AT
製造商:: Texas Instruments

規格

產品概覽和技術數據資料表

法例與合規

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Texas Instruments
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	110A
	Maximum Drain Source Voltage Vds	100V
	Series	NexFET
	Package Type	VSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	7.8mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.8V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	125W
	Typical Gate Charge Qg @ Vgs	37nC
	Maximum Operating Temperature	150°C
	Height	1.1mm
	Standards/Approvals	No
	Width	5 mm
	Length	6.1mm
	Automotive Standard	No

	選取全部
	品牌 Texas Instruments
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 110A
	Maximum Drain Source Voltage Vds 100V
	Series NexFET
	Package Type VSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 7.8mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.8V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 125W
	Typical Gate Charge Qg @ Vgs 37nC
	Maximum Operating Temperature 150°C
	Height 1.1mm
	Standards/Approvals No
	Width 5 mm
	Length 6.1mm
	Automotive Standard No

ESD Control Selection Guide V1

Texas Instruments NexFET Type N-Channel MOSFET, 110 A, 100 V Enhancement, 8-Pin VSON CSD19531Q5AT

訂單超過 $1,300.00 免費送貨

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