製造零件編號

Texas Instruments NexFET Type N-Channel MOSFET, 110 A, 100 V Enhancement, 8-Pin VSON

RS庫存編號:: 162-8145
製造零件編號:: CSD19531Q5AT
製造商:: Texas Instruments

Texas Instruments NexFET Type N-Channel MOSFET, 110 A, 100 V Enhancement, 8-Pin VSON

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 250 件）*

TWD11,650.00

(不含稅)

TWD12,232.50

訂單超過 $1,300.00 免費送貨

有庫存

1,000 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
250 - 1000	TWD46.60	TWD11,650.00
1250 +	TWD44.20	TWD11,050.00

* 參考價格

RS庫存編號:: 162-8145
製造零件編號:: CSD19531Q5AT
製造商:: Texas Instruments

規格

產品概覽和技術數據資料表

法例與合規

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Texas Instruments
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	110A
	Maximum Drain Source Voltage Vds	100V
	Series	NexFET
	Package Type	VSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	7.8mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	125W
	Forward Voltage Vf	0.8V
	Typical Gate Charge Qg @ Vgs	37nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	1.1mm
	Length	6.1mm
	Width	5 mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Texas Instruments
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 110A
	Maximum Drain Source Voltage Vds 100V
	Series NexFET
	Package Type VSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 7.8mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 125W
	Forward Voltage Vf 0.8V
	Typical Gate Charge Qg @ Vgs 37nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 1.1mm
	Length 6.1mm
	Width 5 mm
	Standards/Approvals No
	Automotive Standard No

ESD Control Selection Guide V1

COO (Country of Origin):: MY

Texas Instruments NexFET Type N-Channel MOSFET, 110 A, 100 V Enhancement, 8-Pin VSON

訂單超過 $1,300.00 免費送貨

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