製造零件編號

Vishay SiHF630S Type N-Channel MOSFET, 9 A, 200 V Enhancement, 3-Pin TO-263 SIHF630STRL-GE3

RS庫存編號:: 815-2623
製造零件編號:: SIHF630STRL-GE3
製造商:: Vishay

Vishay SiHF630S Type N-Channel MOSFET, 9 A, 200 V Enhancement, 3-Pin TO-263 SIHF630STRL-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 10 件）*

TWD432.00

(不含稅)

TWD453.60

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年4月09日發貨

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單位	每單位	每包*
10 - 190	TWD43.20	TWD432.00
200 - 390	TWD42.00	TWD420.00
400 +	TWD41.40	TWD414.00

* 參考價格

RS庫存編號:: 815-2623
製造零件編號:: SIHF630STRL-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	9A
	Maximum Drain Source Voltage Vds	200V
	Series	SiHF630S
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	400mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	74W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	2V
	Typical Gate Charge Qg @ Vgs	43nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	10.67mm
	Height	4.83mm
	Width	9.65 mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 9A
	Maximum Drain Source Voltage Vds 200V
	Series SiHF630S
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 400mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 74W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 2V
	Typical Gate Charge Qg @ Vgs 43nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 10.67mm
	Height 4.83mm
	Width 9.65 mm
	Automotive Standard No

COO (Country of Origin):: CN

Vishay SiHF630S Type N-Channel MOSFET, 9 A, 200 V Enhancement, 3-Pin TO-263 SIHF630STRL-GE3

訂單超過 $1,300.00 免費送貨

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