Vishay SUM40012EL Type N-Channel MOSFET, 150 A, 40 V Enhancement, 3-Pin TO-263
- RS庫存編號:
- 188-4926
- 製造零件編號:
- SUM40012EL-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 800 件）*
TWD37,280.00
(不含稅)
TWD39,144.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月29日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 800 - 800 | TWD46.60 | TWD37,280.00 |
| 1600 + | TWD45.70 | TWD36,560.00 |
* 參考價格
- RS庫存編號:
- 188-4926
- 製造零件編號:
- SUM40012EL-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | SUM40012EL | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Maximum Power Dissipation Pd | 150W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.41mm | |
| Height | 4.57mm | |
| Width | 9.65 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series SUM40012EL | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Maximum Power Dissipation Pd 150W | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.41mm | ||
Height 4.57mm | ||
Width 9.65 mm | ||
Automotive Standard No | ||
N-Channel 40 V (D-S) MOSFET.
TrenchFET® power MOSFET
Maximum 175 °C junction temperature
Excellent RDS-Qg and RDS-Qoss FOM reduce power loss from conduction and switching to enable high efficiency
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