Vishay Si2366DS Type N-Channel MOSFET, 5.8 A, 30 V Enhancement, 3-Pin SOT-23 SI2366DS-T1-GE3
- RS庫存編號:
- 812-3132
- 製造零件編號:
- SI2366DS-T1-GE3
- 製造商:
- Vishay
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|---|---|---|
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| 760 - 1480 | TWD14.80 | TWD296.00 |
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* 參考價格
- RS庫存編號:
- 812-3132
- 製造零件編號:
- SI2366DS-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | Si2366DS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Forward Voltage Vf | 0.85V | |
| Typical Gate Charge Qg @ Vgs | 6.4nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Width | 1.4mm | |
| Length | 3.04mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series Si2366DS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 2.1W | ||
Forward Voltage Vf 0.85V | ||
Typical Gate Charge Qg @ Vgs 6.4nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Width 1.4mm | ||
Length 3.04mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Si2366DS Series MOSFET, 30V Maximum Drain Source Voltage, 5.8A Maximum Continuous Drain Current - SI2366DS-T1-GE3
This MOSFET is a compact N-channel enhancement device designed for surface-mount switching in low-voltage electronic circuits. It operates across a wide temperature range and is suited to power-management roles where efficient conduction and moderate switching are required. The package is a common SOT-23 form factor for use in densely populated assemblies.
Features and Benefits:
• Maximum drain voltage 30V enabling low-voltage power switching
• Continuous drain current 5.8A for sustained current handling
• Low Rds(on) 42mΩ reducing conduction losses
• Forward voltage 0.85V supporting efficient drive conditions
• Typical gate charge 6.4nC allowing controlled switching energy
• Power dissipation 2.1W for thermal-limited applications
• Continuous drain current 5.8A for sustained current handling
• Low Rds(on) 42mΩ reducing conduction losses
• Forward voltage 0.85V supporting efficient drive conditions
• Typical gate charge 6.4nC allowing controlled switching energy
• Power dissipation 2.1W for thermal-limited applications
Applications
• Suitable for USB power-distribution and load switching
• Ideal for DC-DC converter output-stage use
• Used with battery-management and charging circuits
• Can be used for motor-driver low-side switching
• Useful in consumer electronics power-rail protection
• Ideal for DC-DC converter output-stage use
• Used with battery-management and charging circuits
• Can be used for motor-driver low-side switching
• Useful in consumer electronics power-rail protection
What package should I expect for automated assembly?
It is supplied in a SOT-23 surface-mount package compatible with standard pick-and-place and reflow processes.
How well does it tolerate harsh thermal environments?
Rated for operation from -55 °C up to 150 °C, it accommodates a broad range of ambient and elevated junction temperatures.
What gate drive amplitude is permitted?
The device accepts up to ±20V between gate and source, permitting a wide range of drive voltages within that limit.
How many pins are available for PCB footprint routing?
It uses a three-pin configuration typical of small-signal MOSFETs, simplifying footprint layout and routing.
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