Vishay Si2366DS Type N-Channel MOSFET, 5.8 A, 30 V Enhancement, 3-Pin SOT-23 SI2366DS-T1-GE3
- RS庫存編號:
- 812-3132
- 製造零件編號:
- SI2366DS-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計(1 包,共 20 件)*
TWD280.00
(不含稅)
TWD294.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 340 件從 2026年6月29日 起發貨
- 加上 2,420 件從 2026年7月06日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 740 | TWD14.00 | TWD280.00 |
| 760 - 1480 | TWD13.70 | TWD274.00 |
| 1500 + | TWD13.40 | TWD268.00 |
* 參考價格
- RS庫存編號:
- 812-3132
- 製造零件編號:
- SI2366DS-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si2366DS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.85V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.1W | |
| Typical Gate Charge Qg @ Vgs | 6.4nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Standards/Approvals | RoHS | |
| Height | 1.02mm | |
| Width | 1.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si2366DS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.85V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.1W | ||
Typical Gate Charge Qg @ Vgs 6.4nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Standards/Approvals RoHS | ||
Height 1.02mm | ||
Width 1.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Si2366DS Series MOSFET, 30V Maximum Drain Source Voltage, 5.8A Maximum Continuous Drain Current - SI2366DS-T1-GE3
This MOSFET is a low-voltage N-channel semiconductor device designed for surface-mounted power switching in Compact electronic assemblies. It operates within a moderate voltage range and supports temperature extremes, making it suitable for dense board-level designs where small footprint and controlled switching behaviour are required.
Features and Benefits:
• 42mΩ Rds(on) yields low conduction losses during switching
• 5.8A continuous drain current supports moderate load currents
• 30V drain-source rating enables low-voltage power rails
• 6.4nC typical gate charge permits fast gate transitions
• 2.1W power dissipation allows for sustained thermal loading
• 150°C maximum operating temperature endures elevated environments
• 5.8A continuous drain current supports moderate load currents
• 30V drain-source rating enables low-voltage power rails
• 6.4nC typical gate charge permits fast gate transitions
• 2.1W power dissipation allows for sustained thermal loading
• 150°C maximum operating temperature endures elevated environments
Applications
• Suitable for DC step-down converters in automation equipment
• Ideal for load switching in control and Interface modules
• Used for motor driver stages in small electromechanical systems
• Can be used for battery protection and power-path management
• Used with Compact consumer power supplies requiring surface-mount parts
• Ideal for load switching in control and Interface modules
• Used for motor driver stages in small electromechanical systems
• Can be used for battery protection and power-path management
• Used with Compact consumer power supplies requiring surface-mount parts
What mounting style does it require for PCB assembly?
It is supplied for surface-mount placement in a three-pin package compatible with standard SOT-23 footprints.
What gate voltage endurance should designers expect?
The device tolerates gate-source voltages up to 20V, so gate drive must remain within that limit.
How wide an ambient temperature range can it operate in?
It is specified to operate down to -55°C and up to 150°C junction temperature for broad thermal margins.
What mechanical package size considerations are there for layout?
The package measures approximately 3.04mm length, 1.4mm width and 1.02mm height for footprint and clearance planning.
Are there environmental or regulatory characteristics to note?
The component conforms to RoHS requirements for reduced hazardous substances.
相關連結
- Vishay Si2366DS Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET P-Channel MOSFET -20 V Enhancement, 3-Pin SOT-23 SI2301HDS-T1-GE3
- Vishay SI2324BDS N channel-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 SI2324BDS-T1-GE3
- Vishay Si2301CDS Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SI2303CDS-T1-GE3
- Vishay Si2305CDS Type P-Channel MOSFET 8 V Enhancement, 3-Pin SOT-23 SI2305CDS-T1-GE3
- Vishay Si2309CDS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 SI2309CDS-T1-GE3
- Vishay Si2374DS Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2374DS-T1-GE3
