製造零件編號

Vishay Si2338DS Type N-Channel MOSFET, 6 A, 30 V Enhancement, 3-Pin SOT-23 Si2338DS-T1-GE3

RS庫存編號:: 812-3126
製造零件編號:: Si2338DS-T1-GE3
製造商:: Vishay

Vishay Si2338DS Type N-Channel MOSFET, 6 A, 30 V Enhancement, 3-Pin SOT-23 Si2338DS-T1-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 包，共 20 件）*

TWD280.00

(不含稅)

TWD294.00

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 7,740 個，準備發貨

單位	每單位	每包*
20 +	TWD14.00	TWD280.00

* 參考價格

RS庫存編號:: 812-3126
製造零件編號:: Si2338DS-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	Si2338DS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.033Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±20 V
	Typical Gate Charge Qg @ Vgs	4.2nC
	Maximum Power Dissipation Pd	2.5W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	3.04mm
	Standards/Approvals	IEC 61249-2-21, RoHS 2002/95/EC
	Height	1.02mm
	Width	1.4 mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series Si2338DS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.033Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±20 V
	Typical Gate Charge Qg @ Vgs 4.2nC
	Maximum Power Dissipation Pd 2.5W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 3.04mm
	Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC
	Height 1.02mm
	Width 1.4 mm
	Automotive Standard No

COO (Country of Origin):: CN

Vishay Si2338DS Type N-Channel MOSFET, 6 A, 30 V Enhancement, 3-Pin SOT-23 Si2338DS-T1-GE3

訂單超過 $1,300.00 免費送貨

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