Vishay Si2323DDS Type P-Channel MOSFET, 4.3 A, 20 V Enhancement, 3-Pin SOT-23 SI2323DDS-T1-GE3
- RS庫存編號:
- 812-3110
- 製造零件編號:
- SI2323DDS-T1-GE3
- 製造商:
- Vishay
可享批量折扣
小計（1 包，共 20 件）*
TWD324.00
(不含稅)
TWD340.20
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 3,000 件從 2026年11月20日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 740 | TWD16.20 | TWD324.00 |
| 760 - 1480 | TWD15.80 | TWD316.00 |
| 1500 + | TWD15.60 | TWD312.00 |
* 參考價格
- RS庫存編號:
- 812-3110
- 製造零件編號:
- SI2323DDS-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | Si2323DDS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.79V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.7W | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series Si2323DDS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.79V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.7W | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Height 1.02mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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