onsemi UltraFET Type N-Channel MOSFET, 75 A, 55 V Enhancement, 3-Pin TO-220 HUF75344P3
- RS庫存編號:
- 807-6689
- 製造零件編號:
- HUF75344P3
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD536.00
(不含稅)
TWD562.80
(含稅)
訂單超過 $1,300.00 免費送貨
庫存資訊目前無法查詢
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 10 | TWD107.20 | TWD536.00 |
| 15 - 20 | TWD104.60 | TWD523.00 |
| 25 + | TWD102.80 | TWD514.00 |
* 參考價格
- RS庫存編號:
- 807-6689
- 製造零件編號:
- HUF75344P3
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220 | |
| Series | UltraFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 175nC | |
| Maximum Power Dissipation Pd | 285W | |
| Forward Voltage Vf | 1.25V | |
| Maximum Operating Temperature | 175°C | |
| Height | 16.3mm | |
| Standards/Approvals | No | |
| Width | 4.7 mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220 | ||
Series UltraFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 175nC | ||
Maximum Power Dissipation Pd 285W | ||
Forward Voltage Vf 1.25V | ||
Maximum Operating Temperature 175°C | ||
Height 16.3mm | ||
Standards/Approvals No | ||
Width 4.7 mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable Benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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