onsemi UltraFET Type N-Channel MOSFET, 75 A, 55 V Enhancement, 3-Pin TO-247 HUF75344G3
- RS庫存編號:
- 807-6670
- 製造零件編號:
- HUF75344G3
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
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TWD252.00
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TWD264.60
(含稅)
訂單超過 $1,300.00 免費送貨
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- 加上 20 件從 2026年1月19日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 6 | TWD126.00 | TWD252.00 |
| 8 - 14 | TWD122.50 | TWD245.00 |
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* 參考價格
- RS庫存編號:
- 807-6670
- 製造零件編號:
- HUF75344G3
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | UltraFET | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 285W | |
| Typical Gate Charge Qg @ Vgs | 175nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.82mm | |
| Length | 15.87mm | |
| Standards/Approvals | No | |
| Width | 4.82 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series UltraFET | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 285W | ||
Typical Gate Charge Qg @ Vgs 175nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 20.82mm | ||
Length 15.87mm | ||
Standards/Approvals No | ||
Width 4.82 mm | ||
Automotive Standard No | ||
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable Benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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