onsemi Isolated PowerTrench 2 Type N-Channel Dual N-Channel Power Trench MOSFET, 12 A, 40 V Enhancement, 8-Pin Power 33
- RS庫存編號:
- 806-3504
- 製造零件編號:
- FDMC8030
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD238.00
(不含稅)
TWD249.90
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 355 件準備從其他地點送貨
- 最終 1,645 件從 2026年3月30日 起發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 745 | TWD47.60 | TWD238.00 |
| 750 - 1495 | TWD46.20 | TWD231.00 |
| 1500 + | TWD45.60 | TWD228.00 |
* 參考價格
- RS庫存編號:
- 806-3504
- 製造零件編號:
- FDMC8030
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Dual N-Channel Power Trench MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | Power 33 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Maximum Power Dissipation Pd | 1.9W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.75mm | |
| Width | 3 mm | |
| Standards/Approvals | Lead-Free and RoHS | |
| Length | 3mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Dual N-Channel Power Trench MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type Power 33 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Maximum Power Dissipation Pd 1.9W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Height 0.75mm | ||
Width 3 mm | ||
Standards/Approvals Lead-Free and RoHS | ||
Length 3mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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