N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXYS IXFB110N60P3
- RS庫存編號:
- 802-4344
- 製造零件編號:
- IXFB110N60P3
- 製造商:
- IXYS
可供預購。
單價（不含稅） 個
TWD758.00
(不含稅)
TWD795.90
(含稅)
單位 | 每單位 |
|---|---|
| 1 - 6 | TWD758.00 |
| 7 - 12 | TWD739.00 |
| 13 + | TWD728.00 |
- RS庫存編號:
- 802-4344
- 製造零件編號:
- IXFB110N60P3
- 製造商:
- IXYS
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
規格
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 110 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | PLUS264 |
| Series | HiperFET, Polar3 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 56 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 1.89 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Width | 5.31mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Length | 20.29mm |
| Typical Gate Charge @ Vgs | 245 nC @ 10 V |
| Height | 26.59mm |
| Minimum Operating Temperature | -55 °C |