製造零件編號

Toshiba DTMOSIV Type N-Channel MOSFET, 11.5 A, 600 V Enhancement, 3-Pin TO-220 TK12A60W,S5VX(J

RS庫存編號:: 799-5003
製造零件編號:: TK12A60W,S5VX(J
製造商:: Toshiba

Toshiba DTMOSIV Type N-Channel MOSFET, 11.5 A, 600 V Enhancement, 3-Pin TO-220 TK12A60W,S5VX(J

可享批量折扣

小計（1 包，共 5 件）*

TWD335.00

(不含稅)

TWD351.75

訂單超過 $1,300.00 免費送貨

庫存資訊目前無法查詢

單位	每單位	每包*
5 - 20	TWD67.00	TWD335.00
25 - 120	TWD65.20	TWD326.00
125 - 245	TWD63.40	TWD317.00
250 - 495	TWD62.20	TWD311.00
500 +	TWD61.00	TWD305.00

* 參考價格

RS庫存編號:: 799-5003
製造零件編號:: TK12A60W,S5VX(J
製造商:: Toshiba

規格

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選取全部	屬性	值
	品牌	Toshiba
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	11.5A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220
	Series	DTMOSIV
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	300mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	35W
	Typical Gate Charge Qg @ Vgs	25nC
	Forward Voltage Vf	-1.7V
	Maximum Operating Temperature	150°C
	Height	15mm
	Length	10mm
	Width	4.5 mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Toshiba
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 11.5A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220
	Series DTMOSIV
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 300mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 35W
	Typical Gate Charge Qg @ Vgs 25nC
	Forward Voltage Vf -1.7V
	Maximum Operating Temperature 150°C
	Height 15mm
	Length 10mm
	Width 4.5 mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: MY

Toshiba DTMOSIV Type N-Channel MOSFET, 11.5 A, 600 V Enhancement, 3-Pin TO-220 TK12A60W,S5VX(J

訂單超過 $1,300.00 免費送貨

MOSFET Transistors, Toshiba

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