製造零件編號

Toshiba DTMOSIV Type N-Channel MOSFET, 9.3 A, 650 V Enhancement, 3-Pin TO-220 TK9A65W,S5X(M

RS庫存編號:: 125-0600
製造零件編號:: TK9A65W,S5X(M
製造商:: Toshiba

Toshiba DTMOSIV Type N-Channel MOSFET, 9.3 A, 650 V Enhancement, 3-Pin TO-220 TK9A65W,S5X(M

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 5 件）*

TWD335.00

(不含稅)

TWD351.75

訂單超過 $1,300.00 免費送貨

有庫存

40 件準備從其他地點送貨

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單位	每單位	每包*
5 - 20	TWD67.00	TWD335.00
25 - 45	TWD65.40	TWD327.00
50 - 120	TWD64.00	TWD320.00
125 - 245	TWD62.40	TWD312.00
250 +	TWD61.00	TWD305.00

* 參考價格

RS庫存編號:: 125-0600
製造零件編號:: TK9A65W,S5X(M
製造商:: Toshiba

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Toshiba
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	9.3A
	Maximum Drain Source Voltage Vds	650V
	Series	DTMOSIV
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	500mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	30W
	Typical Gate Charge Qg @ Vgs	20nC
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	-1.7V
	Maximum Operating Temperature	150°C
	Height	15mm
	Width	4.5 mm
	Length	10mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Toshiba
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 9.3A
	Maximum Drain Source Voltage Vds 650V
	Series DTMOSIV
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 500mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 30W
	Typical Gate Charge Qg @ Vgs 20nC
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf -1.7V
	Maximum Operating Temperature 150°C
	Height 15mm
	Width 4.5 mm
	Length 10mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: JP

Toshiba DTMOSIV Type N-Channel MOSFET, 9.3 A, 650 V Enhancement, 3-Pin TO-220 TK9A65W,S5X(M

訂單超過 $1,300.00 免費送貨

MOSFET N-channel, TK8 & TK9 Series, Toshiba

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