Vishay Si4190ADY N-Channel MOSFET, 18 A, 100 V Enhancement, 8-Pin SOIC SI4190ADY-T1-GE3
- RS庫存編號:
- 787-9235
- 製造零件編號:
- SI4190ADY-T1-GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
TWD428.00
(不含稅)
TWD449.40
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 2,415 件從 2027年4月09日 起裝運發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 620 | TWD85.60 | TWD428.00 |
| 625 - 1245 | TWD84.20 | TWD421.00 |
| 1250 + | TWD82.20 | TWD411.00 |
* 參考價格
- RS庫存編號:
- 787-9235
- 製造零件編號:
- SI4190ADY-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | Si4190ADY | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 44.4nC | |
| Maximum Power Dissipation Pd | 6W | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Width | 4mm | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series Si4190ADY | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 44.4nC | ||
Maximum Power Dissipation Pd 6W | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Width 4mm | ||
Height 1.5mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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