N-Channel MOSFET, 18 A, 710 V, 3-Pin TO-220FP STMicroelectronics STF20N65M5
- RS庫存編號:
- 783-3087
- 製造零件編號:
- STF20N65M5
- 製造商:
- STMicroelectronics
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當前暫無庫存，可於22/05/2024發貨，6 工作日送達。
單價（不含稅） /個 (每包:5個)
TWD101.00
(不含稅)
TWD106.05
(含稅)
| 單位 | Per unit | Per Pack* |
| 5 - 10 | TWD101.00 | TWD505.00 |
| 15 - 20 | TWD98.60 | TWD493.00 |
| 25 + | TWD96.80 | TWD484.00 |
| * 參考價格 | ||
包裝方式：
- RS庫存編號:
- 783-3087
- 製造零件編號:
- STF20N65M5
- 製造商:
- STMicroelectronics
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, STMicroelectronics
規格
| 屬性 | 值 |
| Channel Type | N |
| Maximum Continuous Drain Current | 18 A |
| Maximum Drain Source Voltage | 710 V |
| Package Type | TO-220FP |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 190 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 30 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 36 nC @ 10 V |
| Width | 4.6mm |
| Length | 10.4mm |
| Number of Elements per Chip | 1 |
| Height | 16.4mm |
| Series | MDmesh M5 |