STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 18 A, 710 V Enhancement, 3-Pin TO-220
- RS庫存編號:
- 168-7631
- 製造零件編號:
- STF20N65M5
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD3,945.00
(不含稅)
TWD4,142.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 50 件從 2026年5月18日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD78.90 | TWD3,945.00 |
| 100 - 150 | TWD77.20 | TWD3,860.00 |
| 200 + | TWD75.40 | TWD3,770.00 |
* 參考價格
- RS庫存編號:
- 168-7631
- 製造零件編號:
- STF20N65M5
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 710V | |
| Package Type | TO-220 | |
| Series | MDmesh M5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 30W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 16.4mm | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 710V | ||
Package Type TO-220 | ||
Series MDmesh M5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 30W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 16.4mm | ||
Length 10.4mm | ||
Automotive Standard No | ||
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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