onsemi Isolated 2 Type P-Channel MOSFET, 880 mA, 20 V Enhancement, 6-Pin SOT-363 NTJD4152PT1G
- RS庫存編號:
- 780-0611
- 製造零件編號:
- NTJD4152PT1G
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD152.50
(不含稅)
TWD160.00
(含稅)
訂單超過 $1,300.00 免費送貨
供應短缺
- 23,150 件準備從其他地點送貨
我們目前的可售庫存有限，並且我們的供應商預計會出現供應短缺的狀況。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 725 | TWD6.10 | TWD152.50 |
| 750 - 1475 | TWD6.00 | TWD150.00 |
| 1500 + | TWD5.80 | TWD145.00 |
* 參考價格
- RS庫存編號:
- 780-0611
- 製造零件編號:
- NTJD4152PT1G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 880mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.2nC | |
| Maximum Power Dissipation Pd | 350mW | |
| Forward Voltage Vf | -0.8V | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 1.35 mm | |
| Length | 2.2mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 880mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.2nC | ||
Maximum Power Dissipation Pd 350mW | ||
Forward Voltage Vf -0.8V | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 1.35 mm | ||
Length 2.2mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
相關連結
- onsemi Isolated 2 Type P-Channel MOSFET 20 V Enhancement, 6-Pin SOT-363
- onsemi Isolated 2 Type N 880 mA 6-Pin SC-88
- onsemi Isolated 2 Type N-Channel MOSFET 25 V Enhancement, 6-Pin SOT-363 FDG6303N
- onsemi Isolated 2 Type N 880 mA 6-Pin SC-88 NTJD4158CT1G
- onsemi Triple Switching Diode 100mA 80V, 6-Pin SOT-363 HN2D02FUTW1T1G
- onsemi Isolated PowerTrench 2 Type P-Channel MOSFET 60 V Enhancement, 6-Pin SOT-23
- onsemi Isolated 2 Type P-Channel Small Signal 20 V Enhancement, 6-Pin SOT-563
- ROHM UM6J1N Type P-Channel MOSFET Enhancement, 6-Pin SOT-363 UM6J1NTN