onsemi Isolated PowerTrench 2 Type N, Type N-Channel MOSFET, 1.2 A, 20 V Enhancement, 6-Pin SOT-363 FDG1024NZ
- RS庫存編號:
- 864-8142
- 製造零件編號:
- FDG1024NZ
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
暫時無法供應
我們無法確定此產品何時有貨，RS 預計將其從我們的產品目錄中移除。
- RS庫存編號:
- 864-8142
- 製造零件編號:
- FDG1024NZ
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type N | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | PowerTrench | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 259mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 1.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 360mW | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | No | |
| Length | 2mm | |
| Width | 1.25mm | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N, Type N | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series PowerTrench | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 259mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8V | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 1.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 360mW | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals No | ||
Length 2mm | ||
Width 1.25mm | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
相關連結
- onsemi Isolated PowerTrench 2 Type N 1.2 A 6-Pin SOT-363 FDG1024NZ
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363 FDG8850NZ
- onsemi Isolated PowerTrench 2 Type N 5.5 A 8-Pin SOIC FDS6930B
- onsemi Isolated PowerTrench 2 Type N 8.6 A 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N 3.8 A 6-Pin MicroFET
- onsemi Isolated PowerTrench 2 Type P 3 A 6-Pin SSOT
- onsemi Isolated PowerTrench 2 Type P 4.5 A 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type P 6.4 A 8-Pin SOIC