onsemi UltraFET Type N-Channel MOSFET, 24 A, 150 V Enhancement, 8-Pin PQFN-8 FDMS2572
- RS庫存編號:
- 759-9140
- 製造零件編號:
- FDMS2572
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 2 件）*
TWD159.00
(不含稅)
TWD166.96
(含稅)
訂單超過 $1,300.00 免費送貨
供應短缺
- 加上 2,944 件從 2026年6月22日 起發貨
我們目前的可售庫存有限，並且我們的供應商預計會出現供應短缺的狀況。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 748 | TWD79.50 | TWD159.00 |
| 750 - 1498 | TWD78.00 | TWD156.00 |
| 1500 + | TWD75.50 | TWD151.00 |
* 參考價格
- RS庫存編號:
- 759-9140
- 製造零件編號:
- FDMS2572
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | UltraFET | |
| Package Type | PQFN-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 103mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 78W | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.75mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series UltraFET | ||
Package Type PQFN-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 103mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 78W | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.75mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Automotive Standard No | ||
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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