onsemi PowerTrench Type N-Channel MOSFET, 61 A, 150 V Enhancement, 8-Pin PQFN NTMFS015N15MC

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 包,共 10 件)*

TWD558.00

(不含稅)

TWD585.90

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 9,570 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每包*
10 - 740TWD55.80TWD558.00
750 - 1490TWD54.30TWD543.00
1500 +TWD53.60TWD536.00

* 參考價格

包裝方式:
RS庫存編號:
205-2430
製造零件編號:
NTMFS015N15MC
製造商:
onsemi
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

61A

Maximum Drain Source Voltage Vds

150V

Series

PowerTrench

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

14mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

108.7W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

27nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

0.9mm

Standards/Approvals

RoHS

Width

4.9 mm

Length

5.9mm

Automotive Standard

No

The ON Semiconductor Power Trench series 150V N-Channel MOSFET is produced using advanced process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Maximum drain current rating is 61A

Drain to source resistance rating is 14mohm

Small footprint (5mm x 6mm) for compact design

Low RDS(on) to minimize conduction losses

Low QG and capacitance to minimize driver losses

100% UIL tested

Package is Power 56 (PQFN8)

相關連結