onsemi PowerTrench Type N-Channel MOSFET, 61 A, 150 V Enhancement, 8-Pin PQFN
- RS庫存編號:
- 205-2428
- 製造零件編號:
- NTMFS015N15MC
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD167,700.00
(不含稅)
TWD176,100.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 9,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD55.90 | TWD167,700.00 |
| 15000 + | TWD54.80 | TWD164,400.00 |
* 參考價格
- RS庫存編號:
- 205-2428
- 製造零件編號:
- NTMFS015N15MC
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 61A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PQFN | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 108.7W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.9 mm | |
| Standards/Approvals | RoHS | |
| Length | 5.9mm | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 61A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PQFN | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 108.7W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.9 mm | ||
Standards/Approvals RoHS | ||
Length 5.9mm | ||
Height 0.9mm | ||
Automotive Standard No | ||
The ON Semiconductor Power Trench series 150V N-Channel MOSFET is produced using advanced process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Maximum drain current rating is 61A
Drain to source resistance rating is 14mohm
Small footprint (5mm x 6mm) for compact design
Low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
100% UIL tested
Package is Power 56 (PQFN8)
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