onsemi UniFET Type N-Channel MOSFET, 33 A, 250 V Enhancement, 3-Pin TO-263 FDB33N25TM
- RS庫存編號:
- 759-8973
- 製造零件編號:
- FDB33N25TM
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD133.00
(不含稅)
TWD139.64
(含稅)
添加 20 件 件可免費送貨
供應短缺
由于供应链限制，库存會在有货的狀況下進行分配的。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 198 | TWD66.50 | TWD133.00 |
| 200 - 398 | TWD59.00 | TWD118.00 |
| 400 + | TWD58.50 | TWD117.00 |
* 參考價格
- RS庫存編號:
- 759-8973
- 製造零件編號:
- FDB33N25TM
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-263 | |
| Series | UniFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 94mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 36.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 235W | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Width | 11.33 mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-263 | ||
Series UniFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 94mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 36.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 235W | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Width 11.33 mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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