onsemi UniFET Type N-Channel MOSFET, 33 A, 250 V Enhancement, 3-Pin TO-220AB
- RS庫存編號:
- 145-4517
- 製造零件編號:
- FDP33N25
- 製造商:
- onsemi
可享批量折扣
小計（1 管，共 50 件）*
TWD1,580.00
(不含稅)
TWD1,659.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 950 件從 2026年2月23日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 200 | TWD31.60 | TWD1,580.00 |
| 250 + | TWD31.00 | TWD1,550.00 |
* 參考價格
- RS庫存編號:
- 145-4517
- 製造零件編號:
- FDP33N25
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-220AB | |
| Series | UniFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.094Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 235W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Typical Gate Charge Qg @ Vgs | 36.8nC | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Width | 4.83 mm | |
| Height | 9.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-220AB | ||
Series UniFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.094Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 235W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Typical Gate Charge Qg @ Vgs 36.8nC | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Width 4.83 mm | ||
Height 9.4mm | ||
Automotive Standard No | ||
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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