Infineon SIPMOS Type N-Channel MOSFET, 21 mA, 600 V Enhancement, 3-Pin SOT-23 BSS127H6327XTSA2

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TWD212.50

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  • 2026年6月01日 發貨
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1500 +TWD7.40TWD185.00

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包裝方式:
RS庫存編號:
753-2832
製造零件編號:
BSS127H6327XTSA2
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21mA

Maximum Drain Source Voltage Vds

600V

Series

SIPMOS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

600Ω

Channel Mode

Enhancement

Forward Voltage Vf

0.82V

Maximum Power Dissipation Pd

500mW

Typical Gate Charge Qg @ Vgs

0.65nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Width

1.3 mm

Standards/Approvals

No

Height

1mm

Length

2.9mm

Automotive Standard

AEC-Q101

Infineon SIPMOS® N-Channel MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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