Infineon SIPMOS N-Channel MOSFET, 230 mA, 60 V Enhancement, 3-Pin SOT-23 BSS138NH6433XTMA1
- RS庫存編號:
- 178-7507
- Distrelec 貨號:
- 304-24-004
- 製造零件編號:
- BSS138NH6433XTMA1
- 製造商:
- Infineon
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- 170,000 件從 2026年9月28日 起裝運發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 10000 - 40000 | TWD1.90 | TWD19,000.00 |
| 50000 + | TWD1.90 | TWD19,000.00 |
* 參考價格
- RS庫存編號:
- 178-7507
- Distrelec 貨號:
- 304-24-004
- 製造零件編號:
- BSS138NH6433XTMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 230mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Forward Voltage Vf | 0.83V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 360mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Width | 1.3mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 230mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Forward Voltage Vf 0.83V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 360mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Width 1.3mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 6Ω Maximum Drain Source Resistance - BSS138NH6327XTSA2
This MOSFET is a compact N-channel enhancement device designed for low-power switching in surface-mount assemblies. It operates reliably across a wide temperature span for demanding environments and is supplied in a three-pin SOT-23 package suitable for automated PCB assembly. Its configuration supports controlled gate-driven switching within common low-voltage systems.
Features and Benefits:
• 60V drain voltage rating enables higher-voltage switching
• 6Ω maximum RDS(on) minimises conduction losses in small-signal tasks
• 230mA continuous drain current supports low-current load control
• 360mW power dissipation handles modest thermal loads
• 1nC typical gate charge allows faster, efficient switching
• 20V maximum gate-source voltage prevents overdrive in drive circuits
• 6Ω maximum RDS(on) minimises conduction losses in small-signal tasks
• 230mA continuous drain current supports low-current load control
• 360mW power dissipation handles modest thermal loads
• 1nC typical gate charge allows faster, efficient switching
• 20V maximum gate-source voltage prevents overdrive in drive circuits
Applications
• Suitable for automotive sensor interface circuits
• Ideal for battery management low-current switching
• Used for signal-level load disconnect in electronics
• Can be used for power sequencing in control modules
• Appropriate for temperature-stressed industrial electronics
• Ideal for battery management low-current switching
• Used for signal-level load disconnect in electronics
• Can be used for power sequencing in control modules
• Appropriate for temperature-stressed industrial electronics
What ambient temperatures can it be used in reliably?
It is rated for continuous operation from -55°C up to 150°C, accommodating extreme cold starts and elevated operating temperatures.
What mounting and package considerations should designers note?
The device is supplied in a SOT-23 surface-mount 3-pin package optimised for space-constrained PCBs and automated reflow soldering.
How does gate charge affect switching design?
With a typical gate charge of 1nC, gate driver requirements are modest, reducing required drive current and improving switching speed in low-energy applications.
What limits should be observed to avoid device stress?
Keep gate-source voltage within ±20V and ensure dissipation does not exceed 360mW under given thermal conditions to prevent overstress.
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