Infineon HEXFET Type N-Channel MOSFET, 5 A, 30 V Enhancement, 3-Pin SOT-23 IRLML6344TRPBF

RS庫存編號:: 737-7225
Distrelec 貨號:: 304-45-318
製造零件編號:: IRLML6344TRPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 5 A, 30 V Enhancement, 3-Pin SOT-23 IRLML6344TRPBF

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RS庫存編號:: 737-7225
Distrelec 貨號:: 304-45-318
製造零件編號:: IRLML6344TRPBF
製造商:: Infineon

規格

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	37mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	6.8nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.3W
	Maximum Gate Source Voltage Vgs	12 V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	3.04mm
	Width	1.4 mm
	Height	1.02mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 37mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 6.8nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.3W
	Maximum Gate Source Voltage Vgs 12 V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 3.04mm
	Width 1.4 mm
	Height 1.02mm
	Standards/Approvals No
	Automotive Standard No

Infineon HEXFET Series MOSFET, 5A Maximum Continuous Drain Current, 30V Maximum Drain Source Voltage - IRLML6344TRPBF

This MOSFET is a high-performance N-channel surface mount device suitable for various applications in the electronics and automation sectors. Designed with a compact SOT-23 package, it measures 3.04mm in length, 1.4mm in width, and 1.02mm in height. It exhibits excellent thermal performance, with an operating temperature range of -55°C to +150°C.

Features & Benefits

• Offers a continuous drain current of 5A for robust performance

• Maximum drain-source voltage of 30V supports various requirements

• Low RDS(on) of 29mΩ at VGS = 4.5V reduces power losses

• Wide gate threshold voltage range enables flexible operation

• Efficient power dissipation capability of 1.3W enhances reliability

Applications

• Ideal for microcontroller load switching in electronic systems

• Used in power management solutions for automotive

• Effective in DC-DC converters for efficient energy conversion

• Suitable for battery management systems to improve performance

• Effective in motor control circuits for automation tasks

What is the significance of the low RDS(on) value?

The low RDS(on) value indicates lower conduction losses, which translates to better efficiency, especially in high-current applications. This characteristic is essential for reducing heat generation in power electronics.

What voltage range can be applied to the gate-source junction?

The maximum gate-source voltage is ±12V, allowing flexibility in driving conditions while ensuring device integrity within rated limits.

How does the device perform under high temperatures?

With a maximum operating temperature of +150°C, the MOSFET is built to withstand harsh environments, ensuring reliable functionality in demanding applications.

What benefits does the surface mount design provide?

The SOT-23 surface mount design allows for compact circuit layouts and enhances thermal management, making it ideal for modern electronic assemblies.