Nexperia BSH201 Type P-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23 BSH201,215
- RS庫存編號:
- 725-8348
- 製造零件編號:
- BSH201,215
- 製造商:
- Nexperia
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 20 件）*
TWD172.00
(不含稅)
TWD180.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 320 件準備從其他地點送貨
- 加上 960 件從 2026年5月22日 起發貨
- 加上 9,000 件從 2026年5月27日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 740 | TWD8.60 | TWD172.00 |
| 760 - 1480 | TWD7.60 | TWD152.00 |
| 1500 + | TWD7.50 | TWD150.00 |
* 參考價格
- RS庫存編號:
- 725-8348
- 製造零件編號:
- BSH201,215
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | BSH201 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3nC | |
| Maximum Power Dissipation Pd | 417mW | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.3V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series BSH201 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3nC | ||
Maximum Power Dissipation Pd 417mW | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.3V | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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