N-Channel MOSFET, 27 A, 800 V, 3-Pin TO-264AA IXYS IXFK27N80Q
- RS庫存編號:
- 711-5382
- 製造零件編號:
- IXFK27N80Q
- 製造商:
- IXYS
24 現貨庫存，可於6工作日發貨。
單價（不含稅） 個
TWD865.00
(不含稅)
TWD908.25
(含稅)
單位 | 每單位 |
|---|---|
| 1 - 6 | TWD865.00 |
| 7 + | TWD842.00 |
- RS庫存編號:
- 711-5382
- 製造零件編號:
- IXFK27N80Q
- 製造商:
- IXYS
法例與合規
產品詳細資訊
N-channel Power MOSFET, IXYS HiperFET™ Q Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
規格
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 27 A |
| Maximum Drain Source Voltage | 800 V |
| Series | HiperFET, Q-Class |
| Package Type | TO-264AA |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 320 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Power Dissipation | 500 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 19.96mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 170 nC @ 10 V |
| Width | 5.13mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Height | 26.16mm |