製造零件編號

Vishay SiR462DP Type N-Channel MOSFET, 19 A, 30 V Enhancement, 8-Pin SO-8 SIR462DP-T1-GE3

RS庫存編號:: 710-3402
製造零件編號:: SIR462DP-T1-GE3
製造商:: Vishay

Vishay SiR462DP Type N-Channel MOSFET, 19 A, 30 V Enhancement, 8-Pin SO-8 SIR462DP-T1-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 5 件）*

TWD172.00

(不含稅)

TWD180.60

訂單超過 $1,300.00 免費送貨

有庫存

加上 1,930 件從 2026年1月26日起發貨

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單位	每單位	每包*
5 - 745	TWD34.40	TWD172.00
750 - 1495	TWD33.80	TWD169.00
1500 +	TWD32.80	TWD164.00

* 參考價格

RS庫存編號:: 710-3402
製造零件編號:: SIR462DP-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	30V
	Series	SiR462DP
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	8mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	4.8W
	Typical Gate Charge Qg @ Vgs	20nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.8V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Length	4.9mm
	Width	5.89 mm
	Standards/Approvals	No
	Height	1.04mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 30V
	Series SiR462DP
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 8mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 4.8W
	Typical Gate Charge Qg @ Vgs 20nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.8V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Length 4.9mm
	Width 5.89 mm
	Standards/Approvals No
	Height 1.04mm
	Automotive Standard No

COO (Country of Origin):: CN

Vishay SiR462DP Type N-Channel MOSFET, 19 A, 30 V Enhancement, 8-Pin SO-8 SIR462DP-T1-GE3

訂單超過 $1,300.00 免費送貨

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