Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220
- RS庫存編號:
- 688-7216
- Distrelec 貨號:
- 304-35-447
- 製造零件編號:
- IRLB4030PBF
- 製造商:
- Infineon
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|---|---|---|
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- RS庫存編號:
- 688-7216
- Distrelec 貨號:
- 304-35-447
- 製造零件編號:
- IRLB4030PBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Maximum Power Dissipation Pd | 370W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Height | 9.02mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Maximum Power Dissipation Pd 370W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Height 9.02mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 100V Maximum Drain Source Voltage, 180A Maximum Continuous Drain Current - IRLB4030PBF
This n-channel enhancement MOSFET is a high-current power switch designed for through-hole mounting in TO-220 packages, intended for demanding power conversion and switching applications. It operates across a wide thermal range and supports gate-driven control for efficient conduction in DC circuits where low on-resistance and substantial continuous current capability are required.
Features and Benefits:
• Very low on-resistance 4mΩ for reduced conduction losses
• Handles continuous drain current of 180A for high-load applications
• Rated drain-source voltage 100V to accommodate medium-voltage systems
• Maximum power dissipation 370W for sustained thermal loading
• Typical gate charge 87nC enabling predictable switching behaviour
• Gate-source withstand up to 16V for robust drive margin
• Handles continuous drain current of 180A for high-load applications
• Rated drain-source voltage 100V to accommodate medium-voltage systems
• Maximum power dissipation 370W for sustained thermal loading
• Typical gate charge 87nC enabling predictable switching behaviour
• Gate-source withstand up to 16V for robust drive margin
Applications
• Suitable for high-current motor drive stages
• Ideal for synchronous rectification in power supplies
• Used with battery management and DC-DC converters
• Can be used for industrial inverter switching
• Appropriate for telecoms power distribution racks
• Ideal for synchronous rectification in power supplies
• Used with battery management and DC-DC converters
• Can be used for industrial inverter switching
• Appropriate for telecoms power distribution racks
What thermal extremes can it tolerate during operation?
The device is specified to function between -55°C and 175°C, allowing use in both cold-start conditions and elevated-temperature environments encountered near heat sources.
How should it be mounted to manage heat effectively?
It is supplied in a TO-220 through-hole package permitting secure bolted attachment to heatsinks, enabling direct thermal conduction from the package tab for enhanced cooling.
What switching characteristics influence gate driver selection?
With a typical total gate charge of 87nC, driver circuits must supply sufficient peak current for desired transition times while managing switching losses.
What body and channel behaviour affects circuit topology choices?
As an N-channel enhancement device, it conducts when positively driven at the gate relative to source, making it suitable for low-side switching and synchronous topologies.
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