Infineon HEXFET Type N-Channel MOSFET, 160 A, 60 V Enhancement, 3-Pin TO-220 IRFB3306PBF

RS庫存編號:: 688-6910
製造零件編號:: IRFB3306PBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 160 A, 60 V Enhancement, 3-Pin TO-220 IRFB3306PBF

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可享批量折扣

小計（1 包，共 2 件）*

TWD116.00

(不含稅)

TWD121.80

訂單超過 $1,300.00 免費送貨

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272 件準備從其他地點送貨
加上 2,174 件從 2026年1月08日起發貨

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單位	每單位	每包*
2 - 12	TWD58.00	TWD116.00
14 +	TWD54.00	TWD108.00

* 參考價格

RS庫存編號:: 688-6910
製造零件編號:: IRFB3306PBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	160A
	Maximum Drain Source Voltage Vds	60V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	4mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	230W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	85nC
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Length	10.66mm
	Standards/Approvals	No
	Height	9.02mm
	Width	4.82 mm
	Automotive Standard	No
	Distrelec Product Id	304-35-443

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 160A
	Maximum Drain Source Voltage Vds 60V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 4mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 230W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 85nC
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Length 10.66mm
	Standards/Approvals No
	Height 9.02mm
	Width 4.82 mm
	Automotive Standard No
	Distrelec Product Id 304-35-443

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