P-Channel MOSFET, 23 A, 100 V, 3-Pin TO-247AC Infineon IRFP9140NPBF
- RS庫存編號:
- 542-9816
- Distrelec 貨號:
- 302-84-056
- 製造零件編號:
- IRFP9140NPBF
- 製造商:
- Infineon
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TWD70.00
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TWD73.50
(含稅)
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單位 | 每單位 |
|---|---|
| 1 - 6 | TWD70.00 |
| 7 - 34 | TWD69.00 |
| 35 + | TWD55.00 |
** 參考價格
- RS庫存編號:
- 542-9816
- Distrelec 貨號:
- 302-84-056
- 製造零件編號:
- IRFP9140NPBF
- 製造商:
- Infineon
Infineon HEXFET Series MOSFET, 23A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRFP9140NPBF
This high-power MOSFET is designed for efficient switching performance in various applications. It is ideal for power electronics, combining a high continuous drain current capability with low resistance, facilitating dependable and precise control in automation and electrical systems across multiple operational environments.
Features & Benefits
• P-Channel configuration allows for flexible circuit designs
• Maximum continuous drain current of 23A
• 100V drain-source voltage rating enhances safety
• Low RDS(on) of 117mΩ reduces power loss
• Suitable for enhancement mode applications ensuring stable performance
• Maximum continuous drain current of 23A
• 100V drain-source voltage rating enhances safety
• Low RDS(on) of 117mΩ reduces power loss
• Suitable for enhancement mode applications ensuring stable performance
Applications
• Utilised in motor control for improved efficiency
• Ideal for energy management systems that require high reliability
• Common in power supply circuits for robust operation
• Employed in switching regulators for effective power conversion
• Suitable for industrial automation systems requiring dependable switching
• Ideal for energy management systems that require high reliability
• Common in power supply circuits for robust operation
• Employed in switching regulators for effective power conversion
• Suitable for industrial automation systems requiring dependable switching
What is the maximum gate threshold voltage for the device?
It has a maximum gate threshold voltage of 4V, suitable for diverse circuit designs.
How does the RDS(on) value impact performance?
The low RDS(on) value of 117mΩ minimises energy losses, enhancing efficiency and thermal management in applications.
What types of circuits can benefit from this MOSFET?
It is appropriate for both linear and switching circuits, making it versatile for varied electronic applications.
What is the typical gate charge required for operation?
The MOSFET requires a typical gate charge of 97nC at a gate-source voltage of 10V for optimal performance.
What are the implications of the maximum operating temperature?
With a maximum operating temperature of +175°C, this device is suitable for high-temperature environments, improving its reliability in challenging conditions.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
屬性 | 值 |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 23 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | TO-247AC |
| Series | HEXFET |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 117 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 140 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 97 nC @ 10 V |
| Transistor Material | Si |
| Length | 15.9mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Width | 5.3mm |
| Forward Diode Voltage | 1.3V |
| Minimum Operating Temperature | -55 °C |
| Height | 20.3mm |