Vishay IRFI730G Type N-Channel Power MOSFET, 3.7 A, 400 V Enhancement, 3-Pin TO-220 IRFI730GPBF

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包裝方式:
RS庫存編號:
542-9686
製造零件編號:
IRFI730GPBF
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

3.7A

Maximum Drain Source Voltage Vds

400V

Series

IRFI730G

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

38nC

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

35W

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Height

9.8mm

Width

4.8mm

Standards/Approvals

RoHS

Length

10.3mm

Automotive Standard

No

Vishay IRFI730G Series Power MOSFET, 400V Drain Source Voltage, 3.7A Maximum Continuous Drain Current - IRFI730GPBF


This power MOSFET is a high-voltage switching device used to control current in power-conversion and switching circuits. It is an enhancement-mode N-channel transistor designed for through-hole mounting in TO-220 packages and suited to applications requiring high drain-to-source voltage tolerance and standard single-supply gate drive arrangements.

Features and Benefits:


• 400V maximum drain-to-source voltage supports high-voltage switching • 3.7A continuous drain current enables moderate load handling • 35W maximum power dissipation allows sustained thermal loading • 1Ω maximum Rds(on) aids predictable conduction losses • 38nC typical gate charge for reliable switching performance • 20V gate-source rating provides wide drive tolerance

Applications


• Suitable for switch-mode power supplies in industrial equipment • Ideal for motor-drive gate stages in automation systems • Used for high-voltage relay replacement in control panels • Can be used for line-side snubber or clamp circuitry • Suitable for bench power supplies and laboratory power modules

What mounting considerations affect thermal management?


The through-hole TO-220 format permits direct heatsink attachment to the package tab for improved heat transfer and reduced junction temperature.

How does the device behave across extreme ambient temperatures?


The transistor operates between -55°C and 150°C, enabling use in environments with wide thermal variation while maintaining electrical characteristics.

What is the typical switching charge impact on drive circuits?


The 38nC gate charge defines the energy required from the driver and influences switching speed and driver current requirements during transitions.

Are there limits on gate drive to prevent damage?


The maximum gate-source voltage is 20V, which must not be exceeded to avoid gate-oxide stress and potential device failure.

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