Infineon HEXFET Type P-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin IPAK IRFU9024NPBF

RS庫存編號:: 541-1657
製造零件編號:: IRFU9024NPBF
製造商:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin IPAK IRFU9024NPBF

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RS庫存編號:: 541-1657
製造零件編號:: IRFU9024NPBF
製造商:: Infineon

規格

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	11A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	IPAK
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	175mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	38W
	Typical Gate Charge Qg @ Vgs	19nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.6V
	Maximum Operating Temperature	150°C
	Height	6.22mm
	Length	6.73mm
	Width	2.39 mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 11A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type IPAK
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 175mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 38W
	Typical Gate Charge Qg @ Vgs 19nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.6V
	Maximum Operating Temperature 150°C
	Height 6.22mm
	Length 6.73mm
	Width 2.39 mm
	Standards/Approvals No
	Automotive Standard No

Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 38W Maximum Power Dissipation - IRFU9024NPBF

This P-channel MOSFET is intended for high-efficiency power management applications. It has a maximum continuous drain current of 11A and a maximum drain-source voltage of 55V, adept at handling significant loads while ensuring reliability in various operational conditions. Its through-hole mounting type allows for seamless integration into existing designs, making it a key component for professionals in automation and electronics.

Features & Benefits

• Low Rds(on) of 175mΩ enhances energy efficiency

• Maximum power dissipation of 38W supports robust performance

• Single transistor configuration simplifies design processes

• Complies with lead-free standards for environmentally conscious applications

Applications

• Suitable for power supplies and conversion circuits

• Utilised in motor control systems for effective operation

• Integrated into battery management systems for improved performance

• Applicable in automotive environments for dependable power handling

• Ideal for industrial automation equipment requiring robust performance

What is the temperature range for stable operation?

The component operates effectively within a temperature range of -55°C to +150°C, ensuring reliable performance in various environments.

How can it handle high power loads efficiently?

With a maximum power dissipation of 38W and low Rds(on) of 175mΩ, it manages high power loads with minimal energy loss.

Is it compatible with a standard PCB layout?

Yes, the through-hole mounting type is compatible with standard PCB layouts, facilitating straightforward integration.

What criteria should be considered for gate voltage?

A gate-source voltage range of -20V to +20V provides flexibility; optimum performance is achieved at 10V for effective operation.

How does it contribute to efficiency in power management?

Its low on-resistance and high current capability maximise efficiency in various power management scenarios.