Infineon HEXFET Type N-Channel MOSFET, 17 A, 55 V Enhancement, 3-Pin IPAK IRFU024NPBF

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RS庫存編號:
168-6296
製造零件編號:
IRFU024NPBF
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

IPAK

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

75mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

45W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

20nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

6.73mm

Standards/Approvals

No

Width

2.39 mm

Height

6.22mm

Automotive Standard

No

COO (Country of Origin):
MX

Infineon HEXFET Series MOSFET, 17A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRFU024NPBF


This high-performance N-channel MOSFET is suitable for various electrical applications. With specifications including a maximum continuous drain current of 17A and a maximum drain-source voltage of 55V, this component is important for professionals in the automation and electronics fields. Its capability to operate in high-temperature environments contributes to its reliability for demanding projects.

Features & Benefits


• Maximum power dissipation of up to 45W for robust operation

• Low drain-source resistance of 75mΩ enhances energy efficiency

• Maximum gate threshold of 4V for improved performance

• Single transistor configuration simplifies design integration

• Designed for through-hole mounting in a TO-251 package for easy installation

Applications


• Used in power management systems for enhanced efficiency

• Ideal for high-frequency switching

• Suitable for automotive electronics ensuring consistent performance

• Employed in industrial automation for control systems

• Appropriate for telecommunications to maintain signal integrity

What is the maximum continuous drain current supported?


The maximum continuous drain current supported is 17A, making it suitable for various applications requiring significant power handling.

How does temperature affect performance?


The component operates effectively within a wide temperature range from -55°C to +175°C, ensuring stability under extreme conditions.

Can it handle varying gate-source voltages?


Yes, it can accommodate gate-source voltages from -20 V to +20 V, providing flexibility in circuit design.

What are the implications of low drain-source resistance?


A low drain-source resistance of 75mΩ leads to reduced heat generation and improved efficiency, which is crucial for high-performance applications.

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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