Infineon HEXFET Type N-Channel MOSFET, 17 A, 55 V Enhancement, 3-Pin IPAK

RS庫存編號:: 541-1607
製造零件編號:: IRFU024NPBF
製造商:: Infineon

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RS庫存編號:: 541-1607
製造零件編號:: IRFU024NPBF
製造商:: Infineon

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選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	17A
	Maximum Drain Source Voltage Vds	55V
	Package Type	IPAK
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	75mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	45W
	Typical Gate Charge Qg @ Vgs	20nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	6.73mm
	Width	2.39 mm
	Height	6.22mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 17A
	Maximum Drain Source Voltage Vds 55V
	Package Type IPAK
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 75mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 45W
	Typical Gate Charge Qg @ Vgs 20nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 6.73mm
	Width 2.39 mm
	Height 6.22mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 17A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRFU024NPBF

This high-performance N-channel MOSFET is suitable for various electrical applications. With specifications including a maximum continuous drain current of 17A and a maximum drain-source voltage of 55V, this component is important for professionals in the automation and electronics fields. Its capability to operate in high-temperature environments contributes to its reliability for demanding projects.

Features & Benefits

• Maximum power dissipation of up to 45W for robust operation

• Low drain-source resistance of 75mΩ enhances energy efficiency

• Maximum gate threshold of 4V for improved performance

• Single transistor configuration simplifies design integration

• Designed for through-hole mounting in a TO-251 package for easy installation

Applications

• Used in power management systems for enhanced efficiency

• Ideal for high-frequency switching

• Suitable for automotive electronics ensuring consistent performance

• Employed in industrial automation for control systems

• Appropriate for telecommunications to maintain signal integrity

What is the maximum continuous drain current supported?

The maximum continuous drain current supported is 17A, making it suitable for various applications requiring significant power handling.

How does temperature affect performance?

The component operates effectively within a wide temperature range from -55°C to +175°C, ensuring stability under extreme conditions.

Can it handle varying gate-source voltages?

Yes, it can accommodate gate-source voltages from -20 V to +20 V, providing flexibility in circuit design.

What are the implications of low drain-source resistance?

A low drain-source resistance of 75mΩ leads to reduced heat generation and improved efficiency, which is crucial for high-performance applications.

N-Channel Power MOSFET 55V, Infineon

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