Vishay IRFZ48R Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-220AB IRFZ48RPBF
- RS庫存編號:
- 281-6035
- Distrelec 貨號:
- 171-17-666
- 製造零件編號:
- IRFZ48RPBF
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 1000 件）*
TWD41,400.00
(不含稅)
TWD43,470.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 1000 - 1000 | TWD41.40 | TWD41,400.00 |
| 2000 - 4000 | TWD38.30 | TWD38,300.00 |
| 5000 + | TWD35.60 | TWD35,600.00 |
* 參考價格
- RS庫存編號:
- 281-6035
- Distrelec 貨號:
- 171-17-666
- 製造零件編號:
- IRFZ48RPBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | IRFZ48R | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.018Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Power Dissipation Pd | 190W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series IRFZ48R | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.018Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Power Dissipation Pd 190W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay power MOSFET utilizes advanced processing techniques to achieve low on-resistance per silicon area. It is an efficient and reliable device for various applications due to their fast switching speed and ruggedized design.
Advanced process technology
Ultra low on-resistance
Dynamic dV/dt rating
相關連結
- Vishay IRFZ48R Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220AB IRFZ48RPBF
- ROHM Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220AB
- ROHM Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220AB RX3L07BGNC16
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220AB IRFB3006PBF
- Vishay IRFZ Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin TO-220AB
- Vishay IRFZ Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin TO-220AB
- Vishay Type N-Channel MOSFET 60 V TO-220AB
- Vishay IRFZ Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin TO-220AB IRFZ24PBF