Vishay IRFZ48R Type N-Channel Power MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-220AB IRFZ48RPBF
- RS庫存編號:
- 281-6035
- Distrelec 貨號:
- 171-17-666
- 製造零件編號:
- IRFZ48RPBF
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 1000 件）*
TWD41,700.00
(不含稅)
TWD43,780.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 1000 - 1000 | TWD41.70 | TWD41,700.00 |
| 2000 - 4000 | TWD38.50 | TWD38,500.00 |
| 5000 + | TWD35.80 | TWD35,800.00 |
* 參考價格
- RS庫存編號:
- 281-6035
- Distrelec 貨號:
- 171-17-666
- 製造零件編號:
- IRFZ48RPBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220AB | |
| Series | IRFZ48R | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.018Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2V | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 190W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220AB | ||
Series IRFZ48R | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.018Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2V | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 190W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay IRFZ48R Series Power MOSFET, 60V Drain Source Voltage, 50A Continuous Drain Current - IRFZ48RPBF
This power MOSFET is a through‑hole N‑channel enhancement device designed for switching and amplification tasks in industrial electronic systems. It operates within moderate voltage ranges and is suited to applications requiring robust thermal tolerance and substantial current handling in a TO‑220AB package.
Features and Benefits:
• 60V maximum drain‑source voltage for mid‑voltage circuits • 50A continuous drain current for heavy‑load switching • 0.018Ω Rds(on) reduces conduction losses • 190W power dissipation for sustained power handling • 110nC typical gate charge for predictable switching behaviour • 175°C maximum junction temperature for high‑temperature environments
Applications
• Suitable for motor drive stages in automation systems • Ideal for power supply switch elements in industrial equipment • Used for load switching in electrical distribution modules • Can be used for high‑current switching in mechanical control systems
What gate drive considerations are required for fast switching?
Use a driver capable of delivering sufficient Peak current to charge 110nC quickly, and observe the 20V maximum gate‑source rating to avoid overdrive.
How does thermal management affect continuous operation?
Mount on an appropriate heatsink and consider the 190W dissipation limit and 175°C maximum operating temperature when calculating thermal resistance and duty cycles.
What factors determine suitability for PCB versus chassis mounting?
The through‑hole TO‑220AB format suits both PCB mounting and isolated heatsink attachment
choose mounting based on thermal path and mechanical stress needs.
Can this device tolerate low‑temperature environments during storage and operation?
It is specified to operate down to -55°C, so ensure materials and solder processes are compatible with that lower bound.
相關連結
- Vishay IRFZ48R Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220AB IRFZ48RPBF
- ROHM Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220AB
- ROHM Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220AB RX3L07BGNC16
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220AB IRFB3006PBF
- Vishay IRFZ Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin TO-220AB
- Vishay IRFZ Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin TO-220AB
- Infineon HEXFET Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin TO-220AB IRFZ44EPBF
- Vishay IRFZ Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin TO-220AB IRFZ24PBF