Name: Infineon HEXFET Type N-Channel Power MOSFET, 48 A, 60 V Enhancement, 3-Pin TO-220AB IRFZ44EPBF
Brand: Infineon
SKU: 541-1809
Price: 27.30 TWD
Availability: Discontinued

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選取全部	屬性	值
	品牌	Infineon
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	48A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-220AB
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.023Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	60nC
	Maximum Power Dissipation Pd	110W
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	8.77mm
	Standards/Approvals	ANSI Y14.5M, JEDEC TO-220AB
	Width	4.69mm
	Length	10.54mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 48A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-220AB
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.023Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 60nC
	Maximum Power Dissipation Pd 110W
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 8.77mm
	Standards/Approvals ANSI Y14.5M, JEDEC TO-220AB
	Width 4.69mm
	Length 10.54mm
	Automotive Standard No

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Infineon HEXFET Series MOSFET, 48A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRFZ44EPBF

This MOSFET features an N-channel configuration, making it suitable for industrial and automation applications. It supports high continuous drain current, which is advantageous for power applications. Designed for enhanced efficiency, it is Ideal for electric and electronic systems where quick switching and durability are necessary.

Features & Benefits

• Continuous drain current capability up to 48A for effective operation

• Operates at a drain-source voltage of 60V for power management

• Low Rds(on) improves efficiency and reduces power loss

• Packaged in TO-220AB for straightforward installation and heat dissipation

• Fully avalanche rated, ensuring reliability under stress conditions

Applications

• Power supply circuits for increased efficiency

• Motor control in automation tasks

• DC-DC converters for voltage regulation

• High-performance battery management systems

• Electronic switching devices for enhanced control

What is the maximum gate-to-source voltage for safe operation?

The maximum gate-to-source voltage is ±20V, ensuring proper functionality and safety during operation.

How can this component be effectively mounted?

It is designed for through-hole mounting, facilitating a robust attachment to PCB layouts or heatsinks.

What happens if the device exceeds its maximum junction temperature?

Exceeding the maximum junction temperature of 175°C can result in thermal damage; therefore, proper cooling management is essential.

Can this be used in high-speed switching applications?

Yes, it supports fast switching capabilities, making it suitable for applications requiring Rapid signal processing.

What is the typical power dissipation capability at room temperature?

At 25°C, it can dissipate up to 110W, allowing it to handle substantial power flow without overheating.

Infineon HEXFET Type N-Channel Power MOSFET, 48 A, 60 V Enhancement, 3-Pin TO-220AB IRFZ44EPBF