製造零件編號

Vishay SQJ162EP Type N-Channel MOSFET, 166 A, 60 V Enhancement, 4-Pin SO-8L SQJ162EP-T1_GE3

RS庫存編號:: 280-0018
製造零件編號:: SQJ162EP-T1_GE3
製造商:: Vishay

Vishay SQJ162EP Type N-Channel MOSFET, 166 A, 60 V Enhancement, 4-Pin SO-8L SQJ162EP-T1_GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 3000 件）*

TWD68,700.00

(不含稅)

TWD72,120.00

訂單超過 $1,300.00 免費送貨

有庫存

3,000 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 +	TWD22.90	TWD68,700.00

* 參考價格

RS庫存編號:: 280-0018
製造零件編號:: SQJ162EP-T1_GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	166A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SO-8L
	Series	SQJ162EP
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.005Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	34nC
	Forward Voltage Vf	1.1V
	Maximum Power Dissipation Pd	250W
	Maximum Operating Temperature	175°C
	Standards/Approvals	AEC-Q101
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 166A
	Maximum Drain Source Voltage Vds 60V
	Package Type SO-8L
	Series SQJ162EP
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.005Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 34nC
	Forward Voltage Vf 1.1V
	Maximum Power Dissipation Pd 250W
	Maximum Operating Temperature 175°C
	Standards/Approvals AEC-Q101
	Automotive Standard AEC-Q101

Datasheet - SQJ162EP-T1_GE3

The Vishay Automotive MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

AEC-Q101 qualified

Fully lead (Pb)-free device

Vishay SQJ162EP Type N-Channel MOSFET, 166 A, 60 V Enhancement, 4-Pin SO-8L SQJ162EP-T1_GE3

訂單超過 $1,300.00 免費送貨

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