Infineon OptiMOSa5 Type N-Channel MOSFET, 112 A, 150 V Enhancement, 3-Pin PG-TO262-3
- RS庫存編號:
- 273-3014
- 製造零件編號:
- IPI076N15N5AKSA1
- 製造商:
- Infineon
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TWD158.00
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TWD165.90
(含稅)
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* 參考價格
- RS庫存編號:
- 273-3014
- 製造零件編號:
- IPI076N15N5AKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 112A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PG-TO262-3 | |
| Series | OptiMOSa5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 214W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDECforIndustrialApplications, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 112A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PG-TO262-3 | ||
Series OptiMOSa5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 214W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDECforIndustrialApplications, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon power MOSFETs are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications.
Higher power density designs
More rugged products
System cost reduction
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