Vishay SQ4401CEY Type P-Channel MOSFET, 17.3 A, 40 V Enhancement, 8-Pin SO-8 SQ4401CEY-T1_GE3
- RS庫存編號:
- 268-8355
- 製造零件編號:
- SQ4401CEY-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD249.00
(不含稅)
TWD261.45
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,420 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD49.80 | TWD249.00 |
| 50 - 95 | TWD44.20 | TWD221.00 |
| 100 - 245 | TWD34.80 | TWD174.00 |
| 250 + | TWD34.00 | TWD170.00 |
* 參考價格
- RS庫存編號:
- 268-8355
- 製造零件編號:
- SQ4401CEY-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17.3A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SQ4401CEY | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.025Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 71nC | |
| Forward Voltage Vf | -1.1V | |
| Maximum Power Dissipation Pd | 7.14W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17.3A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SQ4401CEY | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.025Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 71nC | ||
Forward Voltage Vf -1.1V | ||
Maximum Power Dissipation Pd 7.14W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive P channel TrenchFET power MOSFET is lead Pb and halogen free device with single configuration MOSFET and It is independent of operating temperature.
AEC Q101 qualified
ROHS compliant
相關連結
- Vishay SQ4401CEY Type P-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SQ4401CEY-T1_GE3
- Vishay SQ4917CEY 4 Type P-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SQ4917CEY-T1_GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SQJ415EP-T1_GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SQJ481EP-T1_GE3
- Vishay TrenchFET Type P-Channel MOSFET 100 V Enhancement, 4-Pin SO-8 SQJ211ELP-T1_GE3
- Vishay TrenchFET Type P-Channel MOSFET 40 V Enhancement, 4-Pin SO-8 SQJ147ELP-T1_GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 80 V Enhancement, 8-Pin SO-8