製造零件編號

Vishay TrenchFET Type P-Channel MOSFET, 33.6 A, 100 V Enhancement, 4-Pin SO-8 SQJ211ELP-T1_GE3

RS庫存編號:: 228-2959
製造零件編號:: SQJ211ELP-T1_GE3
製造商:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 33.6 A, 100 V Enhancement, 4-Pin SO-8 SQJ211ELP-T1_GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 5 件）*

TWD284.00

(不含稅)

TWD298.20

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 2,865 個，準備發貨

單位	每單位	每包*
5 - 45	TWD56.80	TWD284.00
50 - 95	TWD55.20	TWD276.00
100 - 245	TWD54.20	TWD271.00
250 - 995	TWD52.40	TWD262.00
1000 +	TWD51.20	TWD256.00

* 參考價格

RS庫存編號:: 228-2959
製造零件編號:: SQJ211ELP-T1_GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	33.6A
	Maximum Drain Source Voltage Vds	100V
	Series	TrenchFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	30mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	45nC
	Forward Voltage Vf	-0.82V
	Maximum Power Dissipation Pd	68W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 33.6A
	Maximum Drain Source Voltage Vds 100V
	Series TrenchFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 30mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 45nC
	Forward Voltage Vf -0.82V
	Maximum Power Dissipation Pd 68W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet - SQJ211ELP-T1_GE3

The Vishay TrenchFET automotive P-channel is 100 V power MOSFET.

100 % Rg and UIS tested

Vishay TrenchFET Type P-Channel MOSFET, 33.6 A, 100 V Enhancement, 4-Pin SO-8 SQJ211ELP-T1_GE3

訂單超過 $1,300.00 免費送貨

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