製造零件編號

STMicroelectronics G-HEMT MOSFET, 15 A, 750 V Enhancement, 4-Pin Reel

RS庫存編號:: 265-1034
製造零件編號:: SGT120R65AL
製造商:: STMicroelectronics

STMicroelectronics G-HEMT MOSFET, 15 A, 750 V Enhancement, 4-Pin Reel

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 3000 件）*

TWD213,000.00

(不含稅)

TWD223,650.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年5月18日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 +	TWD71.00	TWD213,000.00

* 參考價格

RS庫存編號:: 265-1034
製造零件編號:: SGT120R65AL
製造商:: STMicroelectronics

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	STMicroelectronics
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	15A
	Maximum Drain Source Voltage Vds	750V
	Package Type	Reel
	Series	G-HEMT
	Mount Type	Surface
	Pin Count	4
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 STMicroelectronics
	Product Type MOSFET
	Maximum Continuous Drain Current Id 15A
	Maximum Drain Source Voltage Vds 750V
	Package Type Reel
	Series G-HEMT
	Mount Type Surface
	Pin Count 4
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - SGT120R65AL

COO (Country of Origin):: CN

The STMicroelectronics e-mode PowerGaN transistor is combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.

Enhancement mode normally off transistor

Very high switching speed

High power management capability

Extremely low capacitances

Kelvin source pad for optimum gate driving

Zero reverse recovery charge

STMicroelectronics G-HEMT MOSFET, 15 A, 750 V Enhancement, 4-Pin Reel

訂單超過 $1,300.00 免費送貨

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