STMicroelectronics G-HEMT P-Channel Transistor, 11.5 A, 700 V Enhancement, 8-Pin PowerFLAT SGT190R70ILB
- RS庫存編號:
- 719-635
- 製造零件編號:
- SGT190R70ILB
- 製造商:
- STMicroelectronics
N
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- RS庫存編號:
- 719-635
- 製造零件編號:
- SGT190R70ILB
- 製造商:
- STMicroelectronics
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | Transistor | |
| Channel Type | P-Channel | |
| Maximum Continuous Drain Current Id | 11.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | G-HEMT | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.8nC | |
| Maximum Gate Source Voltage Vgs | -6, 7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.1mm | |
| Width | 8.1mm | |
| Height | 0.9mm | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type Transistor | ||
Channel Type P-Channel | ||
Maximum Continuous Drain Current Id 11.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series G-HEMT | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.8nC | ||
Maximum Gate Source Voltage Vgs -6, 7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Operating Temperature 150°C | ||
Length 8.1mm | ||
Width 8.1mm | ||
Height 0.9mm | ||
- COO (Country of Origin):
- CN
The STMicroelectronics 700 V 11.5 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
Enhancement mode normally off transistor
Very high switching speed
High power management capability
Extremely low capacitances
Kelvin source pad for optimum gate driving
Zero reverse recovery charge
ESD safeguard
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