Infineon HEXFET Type N-Channel MOSFET, 45 A, 75 V Enhancement, 3-Pin TO-252 IRFR2607ZTRPBF
- RS庫存編號:
- 262-6768
- 製造零件編號:
- IRFR2607ZTRPBF
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 5 件）*
TWD252.00
(不含稅)
TWD264.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 5,760 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD50.40 | TWD252.00 |
| 50 - 95 | TWD39.20 | TWD196.00 |
| 100 - 245 | TWD35.20 | TWD176.00 |
| 250 - 995 | TWD34.40 | TWD172.00 |
| 1000 + | TWD32.20 | TWD161.00 |
* 參考價格
- RS庫存編號:
- 262-6768
- 製造零件編號:
- IRFR2607ZTRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Power Dissipation Pd | 110W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Power Dissipation Pd 110W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has additional features such as 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Ultra low on-resistance
Repetitive avalanche allowed up to Tjmax
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