Infineon HEXFET Type N-Channel MOSFET, 45 A, 75 V Enhancement, 3-Pin TO-252
- RS庫存編號:
- 262-6767
- 製造零件編號:
- IRFR2607ZTRPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 2000 件）*
TWD41,200.00
(不含稅)
TWD43,260.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 4,000 件從 2026年1月05日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 + | TWD20.60 | TWD41,200.00 |
* 參考價格
- RS庫存編號:
- 262-6767
- 製造零件編號:
- IRFR2607ZTRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Power Dissipation Pd | 110W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Power Dissipation Pd 110W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has additional features such as 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Ultra low on-resistance
Repetitive avalanche allowed up to Tjmax
相關連結
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-252 IRFR2607ZTRPBF
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-252 AUIRFR024NTRL
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-252 IRFS3207TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-252 IRFR3607TRPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement TO-252