Infineon IPT Type N-Channel MOSFET, 190 A, 319 V, 16-Pin TO-263
- RS庫存編號:
- 260-2669
- 製造零件編號:
- IPTC039N15NM5ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 1800 件）*
TWD197,640.00
(不含稅)
TWD207,522.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月23日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1800 - 1800 | TWD109.80 | TWD197,640.00 |
| 3600 + | TWD107.60 | TWD193,680.00 |
* 參考價格
- RS庫存編號:
- 260-2669
- 製造零件編號:
- IPTC039N15NM5ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 190A | |
| Maximum Drain Source Voltage Vds | 319V | |
| Series | IPT | |
| Package Type | TO-263 | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 3.9mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.81V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 319W | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.35mm | |
| Width | 10.3 mm | |
| Length | 10.1mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 190A | ||
Maximum Drain Source Voltage Vds 319V | ||
Series IPT | ||
Package Type TO-263 | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 3.9mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.81V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 319W | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Maximum Operating Temperature 175°C | ||
Height 2.35mm | ||
Width 10.3 mm | ||
Length 10.1mm | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET provides a cooling package for superior thermal performance with an innovative package combined with the key features of the technology which allows best in class products as well as high current rating for high-power density designs.
Increased system efficiency enabling extended battery life time
High power density
Superior thermal performance
Saving in cooling system
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