Infineon IPT Type N-Channel MOSFET, 174 A, 150 V, 7-Pin TO-263
- RS庫存編號:
- 260-2675
- 製造零件編號:
- IPTG044N15NM5ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 1800 件）*
TWD169,380.00
(不含稅)
TWD177,840.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月23日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1800 - 1800 | TWD94.10 | TWD169,380.00 |
| 3600 + | TWD92.30 | TWD166,140.00 |
* 參考價格
- RS庫存編號:
- 260-2675
- 製造零件編號:
- IPTG044N15NM5ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 174A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | IPT | |
| Package Type | TO-263 | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 4.4mΩ | |
| Maximum Power Dissipation Pd | 300W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 71nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.82V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC 61249-2-21 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 174A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series IPT | ||
Package Type TO-263 | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 4.4mΩ | ||
Maximum Power Dissipation Pd 300W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 71nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.82V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC 61249-2-21 | ||
Automotive Standard No | ||
The Infineon MOSFET comes in the improved TO leaded package with gullwing leads having a compatible footprint to TO leadless which allows excellent electrical performance. It is a best in class technology with a high current rating.
Low ringing and voltage overshoot
High performance capability
High system reliability
High efficiency and lower EMI
Optimized board utilization
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