Infineon iPB Type N-Channel MOSFET, 180 A, 60 V N TO-263 IPB014N06NATMA1

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小計(1 包,共 2 件)*

TWD118.00

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TWD123.90

(含稅)

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2 - 48TWD59.00TWD118.00
50 - 98TWD57.00TWD114.00
100 - 248TWD55.50TWD111.00
250 - 498TWD54.50TWD109.00
500 +TWD53.50TWD107.00

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包裝方式:
RS庫存編號:
259-1541
製造零件編號:
IPB014N06NATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Channel Mode

N

Standards/Approvals

No

Automotive Standard

No

The Infineon optimos 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make optimos 25V the best choice for the demanding requirements of voltage regulator solutions in servers, Datacom and telecom applications. Available in half bridge configuration (power stage 5x6).

N-channel enhancement mode

AEC qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green product (RoHS compliant)

Ultra low Rds(on)

100% avalanche tested

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