製造零件編號

Infineon iPB Type N-Channel MOSFET, 180 A, 100 V Enhancement TO-263 IPB180N10S403ATMA1

RS庫存編號:: 258-3803
製造零件編號:: IPB180N10S403ATMA1
製造商:: Infineon

Infineon iPB Type N-Channel MOSFET, 180 A, 100 V Enhancement TO-263 IPB180N10S403ATMA1

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 件）*

TWD191.00

(不含稅)

TWD200.55

訂單超過 $1,300.00 免費送貨

庫存資訊目前無法查詢

單位	每單位
1 - 9	TWD191.00
10 - 99	TWD181.00
100 - 249	TWD169.00
250 - 499	TWD158.00
500 +	TWD144.00

* 參考價格

RS庫存編號:: 258-3803
製造零件編號:: IPB180N10S403ATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	100V
	Series	iPB
	Package Type	TO-263
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	3.3mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	250W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	108nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 100V
	Series iPB
	Package Type TO-263
	Mount Type Surface
	Maximum Drain Source Resistance Rds 3.3mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 250W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 108nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IPB180N10S403ATMA1

The Infineon OptiMOS-T2 power-transistor is N-channel normal level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow

Infineon iPB Type N-Channel MOSFET, 180 A, 100 V Enhancement TO-263 IPB180N10S403ATMA1

訂單超過 $1,300.00 免費送貨

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